Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications

Growth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition

The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...

Low temperature chemical vapor deposition growth of b-SiC on (100) Si using methylsilane and device characteristics

The growth properties of b-SiC on ~100! Si grown by rapid thermal chemical vapor deposition, using a single precursor ~methylsilane! without an initial surface carbonization step, were investigated. An optimun growth temperature at 800 °C was found to grow single crystalline materials. A simple Al Schottky barrier fabricated on n-type SiC grown on Si substrates exhibited a ‘‘hard’’ reverse brea...

Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

................................................................................................. iii Sammanfattning ..................................................................................... iv Acknowledgement ................................................................................... v List of included publications ..............................................................

Graphene epitaxy by chemical vapor deposition on SiC.

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...